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IRGB4715DPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRGB4715DPbF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB4715DPbF Datasheet, IRGB4715DPbF PDF,ピン配置, 機能
 
VCES = 650V
IC = 15A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 8A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C  C
G
E
n-channel
G CE
IRGS4715DPbF 
D2Pak 
E
C
G
IRGB4715DPbF 
TO220AB 
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number Package Type
Standard Pack
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
TO-220
D2-Pak
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D2-Pak)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 12, 2014

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