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IRGS4715DPBF の電気的特性と機能

IRGS4715DPBFのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGS4715DPBF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGS4715DPBF Datasheet, IRGS4715DPBF PDF,ピン配置, 機能
 
VCES = 650V
IC = 15A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 8A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C  C
G
E
n-channel
G CE
IRGS4715DPbF 
D2Pak 
E
C
G
IRGB4715DPbF 
TO220AB 
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number Package Type
Standard Pack
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
TO-220
D2-Pak
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D2-Pak)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 12, 2014

1 Page





IRGS4715DPBF pdf, ピン配列
 
30
25
20
15
10
5
Square Wave:
VCC
I
Diode as specified
0
0.1
25
IRGB4715DPBF/IRGS4715DPBF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 50W
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
120
100
20
90
15
60
10
30
5
0
25 50 75 100 125 150 175
TC (°C)
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
100
0
25 50 75 100 125 150 175
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
100
10µsec
10
100µsec
1msec
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
100
VCE (V)
1000
Fig. 4 - Forward SOA
TC = 25°C; TJ 175°C; VGE = 15V
3 www.irf.com © 2013 International Rectifier
10
1
10
100
VCE (V)
1000
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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November 12, 2014


3Pages


IRGS4715DPBF 電子部品, 半導体
 
20
15 RG = 10
10 RG =22
RG = 50
5 RG = 100
0
2 4 6 8 10
IF (A)
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 175°C
15
12
14
12
9
6
3
0 200 400 600 800
diF /dt (A/µs)
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 8A; TJ = 175°C
300
250
RG = 10
RG = 22
RG = 5
200 RG = 100
150
100
50
0
0 2 4 6 8 10 12 14 16 18
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 175°C
6 www.irf.com © 2013 International Rectifier
IRGB4715DPBF/IRGS4715DPBF
16
14
12
10
8
6
4
0 20 40 60 80
RG (
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C
1400
100
1200
1000
800
600
16A



8A

400 4A
200
0
200 400 600 800 1000
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
20
50
16 40
Tsc Isc
12 30
8 20
4 10
00
9 10 11 12 13 14 15 16
VGE (V)
Fig. 23 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
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November 12, 2014

6 Page



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部品番号部品説明メーカ
IRGS4715DPBF

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


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