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IRGR3B60KD2PBF の電気的特性と機能

IRGR3B60KD2PBFのメーカーはInternational Rectifierです、この部品の機能は「Insulated Gate Bipolar Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGR3B60KD2PBF
部品説明 Insulated Gate Bipolar Transistor
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGR3B60KD2PBF Datasheet, IRGR3B60KD2PBF PDF,ピン配置, 機能
PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 4.2A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.9V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ Tc = 25°C Diode Continous Forward Current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
dRθJA Junction-to-Ambient, (PCB Mount)
Wt Weight
www.irf.com
D-Pak
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
g
1
2/23/04

1 Page





IRGR3B60KD2PBF pdf, ピン配列
10
8
6
4
2
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
IRGR3B60KD2PbF
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10
10 µs
1 100 µs
1ms
0.1 10ms
DC
0.01
1
10 100 1000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C
www.irf.com
10000
100
10
1
0
10
100
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
1000
3


3Pages


IRGR3B60KD2PBF 電子部品, 半導体
IRGR3B60KD2PbF
250
200 EON
150
EOFF
100
50
0
0123456
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100; VGE= 15V
7
1000
100 tdOFF
tF
tR
tdON
10
01234567
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=2.5mH; VCE= 400V
RG= 100; VGE= 15V
8
250
200 EON
150 EOFF
100
50
0
0 100 200 300 400
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 3.0A; VGE= 15V
6
500
1000
tdOFF
100 tF
tR
10
0
tdON
100 200 300 400 500
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=2.5mH; VCE= 400V
ICE= 3.0A; VGE= 15V
www.irf.com

6 Page



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部品番号部品説明メーカ
IRGR3B60KD2PBF

Insulated Gate Bipolar Transistor

International Rectifier
International Rectifier


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