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PDF IRGPS46160DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGPS46160DPBF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
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VCES = 600V
IC = 160A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V @ IC = 120A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
IRGPS46160DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
E
G GC
E
n-channel
Super-247
G
Gate
C
Collector
E
Em itter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGPS46160DPbF
Package Type
Super-247
Standard Pack
Form
Quantity
Tube
25
Orderable part number
IRGPS46160DPbF
Absolute Maximum Ratings
Parameter
VCES Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
ICM Pulse Collector Current, VGE = 15V
cILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
fDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
dJunction-to-Case (IGBT)
dJunction-to-Case (Diode)
RθCS Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Max.
600
h240
160
360
480
h240
h160
480
±20
±30
750
375
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.20
0.63
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 14, 2014
1 page  
IRGPS46160DPbF
25
20
15 ICE = 6.0A
ICE = 120A
10 ICE = 195A
5
0
5 10 15
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
30000
20
25000
20000
15000
EON
10000
5000
EOFF
0
0 50 100 150 200 250
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7Ω; VGE = 15V
30000
25000
350
300
TJ = -40°C
250 TJ = 25°C
TJ = 175°C
200
150
100
50
0
3 4 5 6 7 8 9 10 11 12
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
1000
tdOFF
100 tdON
tF
10
0
tR
50
100 150 200 250
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 66μH; VCE = 400V, RG = 4.7Ω; VGE = 15V
10000
20000
15000
10000
EON
5000
EOFF
1000
tdOFF
tdON
100
tF
tR
0
0 20 40 60 80 100
Rg (Ω)
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V
10
0
20 40 60 80 100
RG (Ω)
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 66μH; VCE = 400V, ICE = 120A; VGE = 15V
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November 14, 2014
5 Page 
IRGPS46160DPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Industrial
(per International Rectifier’s internal guidelines)
Super-247
N/A
Class H3B ( 8000V )††
AEC-Q101-001
Class C5 (1125V )††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Highest passing voltage.
Revision History
Date
11/14/2014
Comments
fÕ Added note to IFM Diode Maximum Forward Current on page 1.
gÕ Added note to switching losses test condition on page 2.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGPS46160DPBF.PDF ] | |
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