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PDF IRGP6660D-EPbF Data sheet ( Hoja de datos )

Número de pieza IRGP6660D-EPbF
Descripción Insulated Gate Bipolar Transistor
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP6660D-EPbF Hoja de datos, Descripción, Manual

VCES = 600V
IC = 60A, TC =100°C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications
• Welding
• H Bridge Converters
IRGP6660DPbF
IRGP6660D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
CC
C
G
E
n-channel
G
Gate
GCE
IRGP6660DPbF
TO-247AC
C
Collector
E
GC
IRGP6660D-EPbF
TO-247AD
E
Emitter
Features
Low VCE(ON) and switching losses
Optimized diode for full bridge hard switch converters
Square RBSOA and maximum junction temperature 175°C
5µs short circuit SOA
Positive VCE (ON) temperature coefficient
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications
Optimized for welding and H bridge converters
Improved reliability due to rugged hard switching
performance and higher power capability
Enables short circuit protection scheme
Excellent current sharing in parallel operation
Environmentally friendly
Base part number
IRGP6660DPBF
IRGP6660D-EPBF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6660DPBF
IRGP6660D-EPBF
Absolute Maximum Ratings
Parameter
Max.
VCES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
95
IC @ TC = 100°C
ICM
Continuous Collector Current
Pulse Collector Current, VGE = 15V
60
144
ILM Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current
192
30
IFM Diode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
192
±20
PD @ TC = 25°C Maximum Power Dissipation
330
PD @ TC = 100°C Maximum Power Dissipation
167
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
-40 to +175
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min. Typ.
Max.
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
–––
–––
–––
–––
0.24
–––
0.45
3.35
–––
40
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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IRGP6660D-EPbF pdf
7
6 ICE = 24A
5
ICE = 48A
ICE = 96A
4
3
2
1
0
5
6.0
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
5.0
4.0
3.0
EOFF
2.0
1.0
EON
0.0
20 30 40 50 60 70 80 90 100
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V
5.0
IRGP6660DPbF/IRGP6660D-EPbF
200
TJ = 25°C
150 TJ = 175°C
100
50
0
2 4 6 8 10 12 14 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
100 tF
tdON
tR
10
10 20 30 40 50 60 70 80 90 100
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
4.0
3.0 EOFF
2.0
EON
1.0
tdOFF
tR
100
tdON
tF
0.0
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
5 www.irf.com © 2014 International Rectifier
10
0
20 40 60 80 100
RG (Ω)
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
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IRGP6660D-EPbF arduino
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
IRGP6660DPbF/IRGP6660D-EPbF
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE:
THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRFPE30
135H
56 57
PART NUMBER
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
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