|
|
PDF FDB86360_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB86360_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDB86360_F085 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
FDB86360_F085
N-Channel Power Trench® MOSFET
80V, 110A, 1.8mΩ
January 2014
DD
Features
Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A
Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Integrated Starter/alternator
Primary Switch for 12V Systems
GS
TO-263
FDB SERIES
G
S
For current package drawing, please refer to the Fairchild
website at www.fairchildsemi.com/packaging
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
110
See Figure4
1167
333
2.22
-55 to + 175
0.45
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDB86360
Device
FDB86360_F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Notes:
1: Current is limited by bondwire configuration.
32pm:r:oeRuSsnetθatnJirntAteigndisgshutTherJferae=csieu2sm5ob°faCotshf,eetLhdde=orjan0ui.nnm5c7potimiuonnnsHt-.i,tnoRIgA-cθSoaJn=sCea6is4a1Angidu,naV2craDpasDanedt=e-toeo8fd-0a2Vbmoyzdbducieeroinsnptiggptnehinrew.drmhuicaletlorRrecθshJisAatriasgnidnceegtewarnhmdeirnVeeDtdDhbe=yc0tahVseedutuhsreeinrrg'ms tabimloraeerfdienrdeaenvscaieglanins.cdhTeehfeinmedaxaismtuhme sroaltdinegr
©2013 Fairchild Semiconductor Corporation
FDB86360_F085 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics
40
ID = 80A
30
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
20
TJ = 175oC
10
TJ = 25oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
10
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.2
0.8
0.4
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.4
VGS = VDS
1.2 ID = 250μA
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.10
ID = 5mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100000
10000
Ciss
Coss
1000
Crss
100
f = 1MHz
VGS = 0V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
VDD = 32V
VDD = 40V
6
VDD = 48V
4
2
0
0 50 100 150 200 250
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDB86360_F085 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDB86360_F085.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDB86360_F085 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |