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PDF FDB86102LZ Data sheet ( Hoja de datos )
| Número de pieza | FDB86102LZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDB86102LZ
N-Channel PowerTrench® MOSFET
100 V, 30 A, 24 mΩ
May 2011
Features
General Description
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8.3 A
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 6.8 A
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC-DC conversion
Inverter
Synchronous Rectifier
D
D
G
S
TO-263AB
FDB Series
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy
(Note 3)
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
Thermal Characteristics
Ratings
100
±20
30
40
8.3
50
121
3.1
2
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
1.9
40
°C/W
Device Marking
FDB86102LZ
Device
FDB86102LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24 mm
Quantity
800 units
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
300
100
SINGLE PULSE
RθJC = 1.9oC/W
TC = 25oC
10
10-3
10-2
10-1
1
10 100
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
10-2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 1.9 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-1 1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Case Transient Thermal Response Curve
1000
1000
©2011 Fairchild Semiconductor Corporation
FDB86102LZ Rev.C1
5
www.fairchildsemi.com
5 Page | ||
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