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PDF FDB024N08BL7 Data sheet ( Hoja de datos )
| Número de pieza | FDB024N08BL7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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June 2014
FDB024N08BL7
N-Channel PowerTrench® MOSFET
80 V, 229 A, 2.4 mΩ
Features
• RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
• Low FOM RDS(on) *QG
• Low Reverse Recovery Charge, Qrr = 112 nC
• Soft Reverse Recovery Body Diode
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• RoHS Compliant
• Qualified according to JEDEC Standards JESD22-A113F and
IPC/JEDEC J-STD-020D.1
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has been
tailored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
123
567
4
D2-PAK
(TO-263)
1. Gate
2. Source
3. Source
4. Drain
5. Source
6. Source
7. Source
D(Pin4, tab)
G
(Pin1)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
Parameter
FDB024N08BL7
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC, Silicon Limited)
- Continuous (TC = 100oC, Silicon Limited)
- Continuous (TC = 25oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
80
±20
229*
162*
120
916
917
6.0
246
1.64
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120 A.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDB024N08BL7
0.61
62.5
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDB024N08BL7 Rev.C4
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
1
0.5
0.1 0.2
0.1
0.05
0.01
0.02
0.01
Single pulse
0.005
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.61oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
1
©2012 Fairchild Semiconductor Corporation
FDB024N08BL7 Rev.C4
5
www.fairchildsemi.com
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| PDF Descargar | [ Datasheet FDB024N08BL7.PDF ] | |
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