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PDF FCP36N60N Data sheet ( Hoja de datos )
| Número de pieza | FCP36N60N | |
| Descripción | N-Channel SupreMOS MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCP36N60N / FCPF36N60NT
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ
December 2013
Features
• RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A
• Ultra Low Gate Charge (Typ. Qg = 86 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP36N60N FCPF36N60NT
600
±30
36 36*
22.7 22.7*
108 108*
1800
12
3.12
100
20
312
2.6
-55 to +150
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Heat Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FCP36N60N
0.4
0.5
62.5
FCPF36N60NT
3.5
0.5
62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve for FCP36N60N
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
10 102 103
t1,RReeccttaanngguullaarr PPuullsseeDDuuraratitoinon[s[esce]c]
Figure 13. Transient Thermal Response Curve for FCPF36N60NT
4
0.5
1
0.2
0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 3.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
100
t1,RReeccttaanngguullaarrPPuulsleseDuDruartiaotnio[nse[cs]ec]
©2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCP36N60N.PDF ] | |
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