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FCP190N60 の電気的特性と機能

FCP190N60のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel SuperFET II MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FCP190N60
部品説明 N-Channel SuperFET II MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FCP190N60 Datasheet, FCP190N60 PDF,ピン配置, 機能
FCP190N60 / FCPF190N60
N-Channel SuperFET® II MOSFET
600 V, 20.2 A, 199 mΩ
December 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 170 mΩ
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 160 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications.
D
GDS
TO-220
GDS TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP190N60 FCPF190N60
600
±20
±30
20.2 20.2*
12.7 12.7*
60.6 60.6*
400
4.0
2.1
100
20
208 39
1.67 0.31
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCP190N60
0.6
62.5
FCPF190N60
3.2
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
1
www.fairchildsemi.com

1 Page





FCP190N60 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
5.0V
4.5V
1
0.3
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain to Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.5
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10 25oC
-55oC
1
2345678
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.4
0.3
0.2
0.1
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
10 20 30
ID, Drain Current [A]
40
50
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100 Coss
*Note:
10 1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1
Coss = Cds + Cgd
Crss = Cgd
0.5
0.1 1
10
100
VDS, Drain to Source Voltage [V]
600
150oC
25oC
10
*Notes:
1. VGS = 0V
1 2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8 VDS = 300V
VDS = 480V
6
4
2
0 *Note: ID = 10A
0 20 40 60
Qg, Total Gate Charge [nC]
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
3
www.fairchildsemi.com


3Pages


FCP190N60 電子部品, 半導体
IG = const.
Figure 15. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 16. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FCP190N60 / FCPF190N60 Rev. C16
6
www.fairchildsemi.com

6 Page



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共有リンク

Link :


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