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Datasheet FCD600N60Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FCD600N60Z | N-Channel SuperFET II MOSFET FCD600N60Z — N-Channel SuperFET® II MOSFET
FCD600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ
November 2013
Features
• 650 V @ TJ = 150°C • Typ. RDS(on) = 510 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF) • 10 |  Fairchild Semiconductor | mosfet |
FCD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FCD1300N80Z | MOSFET, Transistor FCD1300N80Z — N-Channel SuperFET® II MOSFET
FCD1300N80Z
N-Channel SuperFET® II MOSFET
800 V, 4 A, 1.3
August 2014
Features
• RDS(on) = 1.05 Typ.) • Ultra Low Gate Charge (Typ. Qg = 16.2 nC) • Low Eoss (Typ. 1.57 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff Fairchild Semiconductor mosfet | | |
| 2 | FCD2250N80Z | MOSFET, Transistor FCD2250N80Z — N-Channel SuperFET® II MOSFET
December 2014
FCD2250N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.6 A, 2.25 Features
• RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(ef Fairchild Semiconductor mosfet | | |
| 3 | FCD3400N80Z | MOSFET, Transistor FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET
March 2015
FCD3400N80Z / FCU3400N80Z
N-Channel SuperFET® II MOSFET
800 V, 2 A, 3.4 Ω Features
• RDS(on) = 2.75 Ω (Typ.) • Ultra Low Gate Charge (Typ. Qg = 7.4 nC) • Low Eoss (Typ. 0.9 uJ @ 400V) • Low Effective Output Capacit Fairchild Semiconductor mosfet | | |
| 4 | FCD380N60E | N-Channel MOSFET FCD380N60E N-Channel MOSFET
March 2013
FCD380N60E
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ Features
• 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) • 100% Avalanche Tested
Des Fairchild Semiconductor mosfet | | |
| 5 | FCD4B14 | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features
• • • • • • • • • • • •
Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm  ATMEL Corporation sensor | | |
| 6 | FCD4B14CC | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features
• • • • • • • • • • • •
Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm ATMEL Corporation sensor | | |
| 7 | FCD4B14CCB | Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features
• • • • • • • • • • • •
Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm ATMEL Corporation sensor | |
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