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PDF HWL27YRA Data sheet ( Hoja de datos )
| Número de pieza | HWL27YRA | |
| Descripción | L-Band GaAs Power FET | |
| Fabricantes | Hexawave | |
| Logotipo |  |
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Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Greater than 17 dB Gain
• 5V to 10V Operation
Description
The HWL27YRA is a Medium Power GaAs FET
designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS
VGS
ID
IG
TCH
TSTG
PT*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink
+15V
-5V
IDSS
2mA
175°C
-65 to +175°C
3.5W
HWL27YRA
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
RA Package (Ceramic)
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
IDSS
VP
gm
Rth
P1dB
G1dB
PAE
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Pinch-off Voltage at VDS=3V, ID=20mA
Transconductance at VDS=3V, ID=200mA
Thermal Resistance
Power Output at Test Points
VDS=10V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5IDSS
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
300
-3.5
-
-
27.5
16
35
Typ.
400
-2.0
250
30
29
17
42
Max.
600
-1.5
-
40
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HWL27YRA.PDF ] | |
Hoja de datos destacado
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