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Número de pieza | HWC34NC | |
Descripción | C-Band Power FET Non-Via Hole Chip | |
Fabricantes | Hexawave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HWC34NC (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! HWC34NC
C-Band Power FET Non-Via Hole Chip
Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 8.5 dB Typical Gain at 4 GHz
• 5V to 10V Operation
Description
The HWC34NC is a power GaAs FET designed
for various L-band & S-band applications.
Absolute Maximum Ratings
VDS
VGS
ID
IG
TCH
TSTG
PT*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink
+15V
-5V
IDSS
6mA
175°C
-65 to +175°C
12W
Autumn 2002 V1
Outline Dimensions
1525.0
1392.5
9
1235.0
1077.5
1
10
5
920.0
762.5
2
11
6
605.0
3
7
447.5
12
290.0
132.5
0.0
4
13
8
0.0
75.5
444.5
524.0
Units: µm
Thickness: 100 ±5
Chip size ±50
Bond Pads 1-4 (Gate):
Bond Pads 5-8 (Drain):
Bond Pads 9-13(Source):
100 x 100
100 x 100
100 x 100
Electrical Specifications (TA=25°C) f = 4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS Saturated Current at VDS=3V, VGS=0V
mA
900
1200
1600
VP Pinch-off Voltage at VDS=3V, ID=60mA
V -3.5 -2.0 -1.5
gm
P1dB
G1dB
PAE
Transconductance at VDS=3V, ID=600mA
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
mS
dBm
dB
%
-
32
6.5
25
700
33
7.5
30
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet HWC34NC.PDF ] |
Número de pieza | Descripción | Fabricantes |
HWC34NC | C-Band Power FET Non-Via Hole Chip | Hexawave |
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