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Datasheet IPB34CN10NG PDF ( 特性, スペック, ピン接続図 )

部品番号 IPB34CN10NG
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
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IPB34CN10NG Datasheet, IPB34CN10NG PDF,ピン配置, 機能
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
OptiMOS2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO252)
ID
100 V
33 mW
27 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package
Marking
PG-TO263-3
34CN10N
PG-TO252-3
33CN10N
PG-TO262-3
35CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3
35CN10N
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=27 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
27
20
108
47
±20
58
-55 ... 175
55/175/56
A
mJ
V
W
°C
Rev. 1.091
page 1
2013-07-25

1 Page



IPB34CN10NG pdf, ピン配列
Parameter
Symbol Conditions
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=27 A, R G,ext=1.6 W
-
-
-
-
-
-
-
1180
175
13
11
21
17
4
1570 pF
233
20
17 ns
31
25
6
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 7 9 nC
Q gd
Q sw
V DD=50 V, I D=27 A,
V GS=0 to 10 V
Qg
-
-
-
46
7 11
18 24
V plateau
- 5.6 - V
Q oss
V DD=50 V, V GS=0 V
-
18 24 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=27 A,
T j=25 °C
t rr V R=50 V, I F=I S,
Q rr di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
- - 27 A
- - 108
- 1 1.2 V
- 77
ns
- 154 - nC
Rev. 1.091
page 3
2013-07-25


3Pages


IPB34CN10NG 電子部品, 半導体
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=27 A; V GS=10 V
80
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
60
98 %
40
typ
3.5
290 µA
3
29 µA
2.5
2
1.5
20 1
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
Crss
101
102
175 °C
25 °C
175 °C, 98%
101 25 °C, 98%
100
0
Rev. 1.091
20 40 60
VDS [V]
100
80 0
page 6
0.5 1
VSD [V]
1.5 2
2013-07-25

6 Page





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