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IPB34CN10NG データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IPB34CN10NG
部品説明 Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 

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IPB34CN10NG Datasheet, IPB34CN10NG PDF,ピン配置, 機能
IPB34CN10N G IPD33CN10N G
IPI35CN10N G IPP35CN10N G
OptiMOS2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO252)
ID
100 V
33 mW
27 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package
Marking
PG-TO263-3
34CN10N
PG-TO252-3
33CN10N
PG-TO262-3
35CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3
35CN10N
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=27 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
27
20
108
47
±20
58
-55 ... 175
55/175/56
A
mJ
V
W
°C
Rev. 1.091
page 1
2013-07-25

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