DataSheet.es    


Datasheet IPB017N08N5 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IPB017N08N5MOSFET, Transistor

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB017N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket 1Description Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM
Infineon
Infineon		mosfet


IPB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IPB009N03LGMOSFET, Transistor

IPB009N03LG MOSFET OptiMOSª3Power-Transistor,30V Features •MOSFETforORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel •Logiclevel •Ultra-lowon-resistanceRDS(on) •100%Avalanchetested •Pb-freeplating;RoHScomp
Infineon Technologies
Infineon Technologies		mosfet
2IPB010N06NMOSFET, Transistor

IPB010N06N MOSFET OptiMOSTMPower-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Hal
Infineon
Infineon		mosfet
3IPB011N04LGOptiMOS3 Power Transistor

Jf^S $  "   "%&$!"#E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ R' ) -  . 8 AC ) ,; @9 3 @6 / @; @E 7C C FBE ; 4> 7 * AH7C - FBB> J R + F3 > ; 8 ; 76 3 55AC 6; @9 E A$     R( 5: 3 @@7> R& A9; 5> 7G 7> R/ > E C 3 > AH A@ C 7D ; D E 3 @57 ' 9I"]\# )# $= ;0@/?& @9 9 -= D ) 9I '  - A@
Infineon Technologies
Infineon Technologies		transistor
4IPB011N04NGOptiMOS3 Power Transistor

Ie]R #  !  !  "%&$!"#D  # : A 0< & < ,9=4 => :< 6LHZ[XLY Q& ( ,  - 7 @B ( + :? 8 2 ? 5 . ? :? D 6B B EAD :3 = 6 ) @G6B , EAA= I Q * E2 = :7 :65 2 44@B 5:? 8 D @ $    Q' 492 ? ? 6= Q' @B >2 = = 6F 6= Q. = D B 2 = @G @? B 6C :C D 2 ? 46 ' 9H"\[# Q F 2= 2 ? 496 B 2D 65 Q ) 3 7
Infineon Technologies
Infineon Technologies		transistor
5IPB014N06NPower Transistor

Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according t
Infineon Technologies
Infineon Technologies		transistor
6IPB015N04LGOptiMOS3 Power Transistor

Jg_T $   "   "%&$!"#E  $ ;B 1= '= -: >5 >? ;= 6MI[\YMZ S 4E FE I< F 6;< A: ' ) -  . 9 BD- ' * S) C F < @< L 87 F 86;AB?B: K 9 BD    6BAH 8D F 8D E S+ G 4?< 9 < 87 466BD 7< A: F B$    S( 6;4AA8? ?B: < 6 ?8H 8? S J68??8AF: 4F 8 6;4D : 8 J ' 9I"^]# C D B7G 6F ) '  S/ 8D K
Infineon Technologies
Infineon Technologies		transistor
7IPB015N04NGOptiMOS3 Power Transistor

Type IPP015N04N G IPB015N04N G OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low
Infineon Technologies
Infineon Technologies		transistor



Esta página es del resultado de búsqueda del IPB017N08N5. Si pulsa el resultado de búsqueda de IPB017N08N5 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap