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PDF IPA040N06N Data sheet ( Hoja de datos )

Número de pieza IPA040N06N
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
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No Preview Available ! IPA040N06N Hoja de datos, Descripción, Manual

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPA040N06N
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket

1 page




IPA040N06N pdf
OptiMOSTMPower-Transistor,60V
IPA040N06N
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
2700 3375
670 838
28 56
14 -
16 -
33 -
8-
Unit Note/TestCondition
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
pF VGS=0V,VDS=30V,f=1MHz
ns
VDD=30V,VGS=10V,ID=69A,
RG,ext=3
ns
VDD=30V,VGS=10V,ID=69A,
RG,ext=3
ns
VDD=30V,VGS=10V,ID=69A,
RG,ext=3
ns
VDD=30V,VGS=10V,ID=69A,
RG,ext=3
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
13 -
8-
79
13 -
38 44
4.8 -
33 -
44 55
Unit Note/TestCondition
nC VDD=30V,ID=69A,VGS=0to10V
nC VDD=30V,ID=69A,VGS=0to10V
nC VDD=30V,ID=69A,VGS=0to10V
nC VDD=30V,ID=69A,VGS=0to10V
nC VDD=30V,ID=69A,VGS=0to10V
V VDD=30V,ID=69A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=30V,VGS=0V
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 30
- 276
0.88 1.2
33 53
28 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=30A,Tj=25°C
ns VR=30V,IF=30A,diF/dt=100A/µs
nC VR=30V,IF=30A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
5
Rev.2.1,2014-06-19

5 Page





IPA040N06N arduino
OptiMOSTMPower-Transistor,60V
IPA040N06N
RevisionHistory
IPA040N06N
Revision:2014-06-19,Rev.2.1
Previous Revision
Revision Date
2.1 2014-06-19
Subjects (major changes since last revision)
Rev.2.1
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11 Rev.2.1,2014-06-19

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