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Datasheet IKP20N60H3 PDF ( 特性, スペック, ピン接続図 )

部品番号 IKP20N60H3
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
Total 16 pages
		
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IKP20N60H3 Datasheet, IKP20N60H3 PDF,ピン配置, 機能
IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKP20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl

1 Page



IKP20N60H3 pdf, ピン配列
IKP20N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3 Rev.2.2,2014-03-12


3Pages


IKP20N60H3 電子部品, 半導体
IKP20N60H3
Highspeedswitchingseriesthirdgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
min.
Value
typ.
max. Unit
- 16 - ns
- 20 - ns
- 194 - ns
- 11 - ns
- 0.45 - mJ
- 0.24 - mJ
- 0.69 - mJ
- 112 - ns
- 0.39 - µC
- 11.0 - A
- -750 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
min.
Value
typ.
max. Unit
- 16 - ns
- 15 - ns
- 227 - ns
- 14 - ns
- 0.60 - mJ
- 0.36 - mJ
- 0.96 - mJ
- 191 - ns
- 0.91 - µC
- 14.2 - A
- -500 - A/µs
6 Rev.2.2,2014-03-12

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