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Datasheet IKP08N65H5 PDF ( 特性, スペック, ピン接続図 )

部品番号 IKP08N65H5
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
Total 17 pages
		
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IKP08N65H5 Datasheet, IKP08N65H5 PDF,ピン配置, 機能
IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP08N65H5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl

1 Page



IKP08N65H5 pdf, ピン配列
IKP08N65H5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3 Rev.2.1,2015-05-05


3Pages


IKP08N65H5 電子部品, 半導体
IKP08N65H5
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tvj=25°C,
- 10 - ns
tr
td(off)
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
RG(on)=48.0,RG(off)=48.0,
- 3 - ns
- 125 - ns
tf
Eon
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
- 30 - ns
- 0.04 - mJ
Eoff diode reverse recovery.
- 0.02 - mJ
Ets - 0.06 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=4.0A,
diF/dt=800A/µs
Tvj=25°C,
VR=400V,
IF=2.0A,
diF/dt=800A/µs
- 40 - ns
- 0.13 - µC
- 6.8 - A
- -220 - A/µs
- 24 - ns
- 0.09 - µC
- 6.9 - A
- -380 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=150°C,
VCC=400V,IC=4.0A,
VGE=0.0/15.0V,
RG(on)=48.0,RG(off)=48.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=2.0A,
VGE=0.0/15.0V,
RG(on)=48.0,RG(off)=48.0,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 10 - ns
- 6 - ns
- 145 - ns
- 16 - ns
- 0.11 - mJ
- 0.05 - mJ
- 0.16 - mJ
- 10 - ns
- 4 - ns
- 164 - ns
- 20 - ns
- 0.06 - mJ
- 0.03 - mJ
- 0.09 - mJ
6 Rev.2.1,2015-05-05

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