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IKI04N60T データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IKI04N60T
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 

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IKI04N60T Datasheet, IKI04N60T PDF,ピン配置, 機能
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
C
Short circuit withstand time – 5μs
Designed for :
- Frequency Converters
G
E
- Drives
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-220-3-1
PG-TO-262-3
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
Package
IKP04N60T 600 V 4 A
1.5 V
175 °C
K04T60
PG-TO-220-3-1
IKI04N60T
600 V 4 A
1.5 V
175 °C
K04T60
PG-TO-262-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
8
4
12
12
8
4
12
±20
5
42
-40...+175
-55...+175
260
Unit
V
A
V
μs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.5 Feb. 09

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