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Datasheet IKI04N60T PDF ( 特性, スペック, ピン接続図 )

部品番号 IKI04N60T
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
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IKI04N60T Datasheet, IKI04N60T PDF,ピン配置, 機能
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
C
Short circuit withstand time – 5μs
Designed for :
- Frequency Converters
G
E
- Drives
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-220-3-1
PG-TO-262-3
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
Marking
Package
IKP04N60T 600 V 4 A
1.5 V
175 °C
K04T60
PG-TO-220-3-1
IKI04N60T
600 V 4 A
1.5 V
175 °C
K04T60
PG-TO-262-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
8
4
12
12
8
4
12
±20
5
42
-40...+175
-55...+175
260
Unit
V
A
V
μs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.5 Feb. 09

1 Page



IKI04N60T pdf, ピン配列
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=4A,
VGE=0/15V,
RG= 47 Ω,
Lσ1)=150nH,
Cσ1)=47pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=400V, IF=4A,
diF/dt=610A/μs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
14
7
164
43
61
84
145
28
79
5.3
346
Unit
max.
- ns
-
-
-
- µJ
-
-
- ns
- nC
-A
- A/μs
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175°C,
VCC=400V,IC=4A,
VGE=0/15V,
RG= 47 Ω
Lσ1)=150nH,
Cσ1)=47pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175°C
VR=400V, IF=4A,
diF/dt=610A/μs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
14
10
185
83
99
97
196
95
291
6.6
253
Unit
max.
- ns
-
-
-
- µJ
-
-
- ns
- nC
-A
- A/μs
1) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.5 Feb. 09


3Pages


IKI04N60T 電子部品, 半導体
TrenchStop® Series
IKP04N60T
pIJIKI04N60Tdsadsa
100ns
10ns
td(on)
td(off)
tf
tr
1ns
0A 2A 4A 6A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 47,
Dynamic test circuit in Figure E)
t d (o ff)
100ns
tf
t d (o n )
10ns
tr
50Ω
100Ω
150Ω
200Ω
250Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
100ns
td(off)
tf
td(on)
10ns
tr
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG=47,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
Power Semiconductors
6
Rev. 2.5 Feb. 09

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