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Datasheet IKP01N120H2 PDF ( 特性, スペック, ピン接続図 )

部品番号 IKP01N120H2
部品説明 HighSpeed 2-Technology
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
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IKP01N120H2 Datasheet, IKP01N120H2 PDF,ピン配置, 機能
IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
G
E
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC2 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-220-3-1
Type
IKP01N120H2
VCE
1200V
IC
1A
Eoff
0.09mJ
Tj
150°C
Marking
Package
K01H1202 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
Unit
V
A
3.2
1.3
±20
28
-40...+150
260
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 May 06

1 Page



IKP01N120H2 pdf, ピン配列
IKP01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=25°C,
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=25°C,
VR=800V, IF=1A,
RG=241
min.
-
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
13
6.3
370
28
0.08
0.06
0.14
83
89
2.5
289
178
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
Diode peak rate of fall of reverse
recovery current during tb
trr
Qrr
Irrm
diF/dt
dirr/dt
Tj=150°C
VCC=800V,
IC=1A,
VGE=15V/0V,
RG=241,
Lσ2)=180nH,
Cσ2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=150°C
VR=800V, IF=1A,
RG=241
min.
-
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
12
8.9
450
43
0.11
0.09
0.2
213
180
2.7
240
135
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/µs
-
2
3)
) Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP01N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
3
Rev. 2.3 May 06


3Pages


IKP01N120H2 電子部品, 半導体
IKP01N120H2
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
5A
4A Tj=+150°C
Tj=+25°C
3A
2A
1A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
5A
4A
VGE=15V
12V
3A 10V
8V
6V
2A
1A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
4V
IC=2A
3V
IC=1A
2V
IC=0.5A
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
6
Rev. 2.3 May 06

6 Page





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