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IKP06N60TのメーカーはInfineonです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。 |
部品番号 | IKP06N60T |
| |
部品説明 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
メーカ | Infineon | ||
ロゴ | |||
このページの下部にプレビューとIKP06N60Tダウンロード(pdfファイル)リンクがあります。 Total 13 pages
TRENCHSTOP™ Series
IKP06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines, air conditioners and induction
cooking
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
K06T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Value
600
12
6
18
18
12
6
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
Rev. 2.5 20.09.2013
1 Page TRENCHSTOP™ Series
IKP06N60T
p
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9
6
130
58
0.09
0.11
0.2
123
190
5.3
450
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9
8
165
84
0.14
0.18
0.335
180
500
7.6
285
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
IFAG IPC TD VLS
3
Rev. 2.5 20.09.2013
3Pages t d(off)
tf
100ns
td(on)
10ns
TRENCHSTOP™ Series
td(off)
100ns
tf
10ns
IKP06N60T
p
td(on)
tr
tr
1ns
0A 3A 6A 9A 12A 15A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
1ns
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
100ns td(off)
tf
td(on)
10ns
tr
1ns
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
6V
5V max.
4V typ.
3V
m in .
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.18mA)
IFAG IPC TD VLS
6
Rev. 2.5 20.09.2013
6 Page | |||
ページ | 合計 : 13 ページ | ||
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部品番号 | 部品説明 | メーカ |
IKP06N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |