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IKB01N120H2 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 IKB01N120H2
部品説明 HighSpeed 2-Technology
メーカ Infineon
ロゴ Infineon ロゴ 

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IKB01N120H2 Datasheet, IKB01N120H2 PDF,ピン配置, 機能
IKB01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
G
E
- optimised for soft-switching / resonant topologies
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
P-TO-220-3-45
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKB01N120H2
VCE
1200V
IC
1A
Eoff
0.09mJ
Tj
150°C
Marking
Package
K01H1202 P-TO-220-3-45
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
Unit
V
A
3.2
1.3
±20
28
-40...+150
220
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 May 06

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