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Datasheet IGU04N60T PDF ( 特性, スペック, ピン接続図 )

部品番号 IGU04N60T
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
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IGU04N60T Datasheet, IGU04N60T PDF,ピン配置, 機能
IGU04N60T
TRENCHSTOPSeries
q
Low Loss IGBT : IGBT in TRENCHSTOPtechnology
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- frequency inverters
- drives
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGU04N60T
VCE
600 V
IC VCE(sat),Tj=25°C Tj,max
4A
1.5 V
175 C
Marking
G04T60
G
E
PG-TO251-3
Package
PG-TO251-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175C)
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering, 1.6mm (0.063 in.) from case for 10s.
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Ts
Value
600
9.5
6.5
12
12
20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.1 17.02.2016

1 Page



IGU04N60T pdf, ピン配列
IGU04N60T
TRENCHSTOPSeries
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=400V,IC=4A,
VGE=0/15V,
rG=47, L=150nH,
C=47pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
Unit
max.
14 - ns
7-
164 -
43 -
61 - µJ
84 -
145 -
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175C,
VCC=400V,IC=4A,
VGE=0/15V,
rG=47, L=150nH,
C=47pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
Unit
max.
14 - ns
10 -
185 -
83 -
99 - µJ
97 -
196 -
IFAG IPC TD VLS
3
Rev. 2.1 17.02.2016


3Pages


IGU04N60T 電子部品, 半導体
IGU04N60T
TRENCHSTOPSeries
q
100ns
10ns
td(on)
td(off)
tf
tr
1ns
0A 2A 4A 6A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a function
of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 47Ω,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
t
d(on)
10ns
t
r





RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
100ns
td(off)
tf
t
d(on)
10ns
tr
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function
of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, rG=47Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
IFAG IPC TD VLS
6
Rev. 2.1 17.02.2016

6 Page





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