DataSheet.jp


Datasheet IGD06N60T PDF ( 特性, スペック, ピン接続図 )

部品番号 IGD06N60T
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 
プレビュー
Total 12 pages
		
11

No Preview Available !

IGD06N60T Datasheet, IGD06N60T PDF,ピン配置, 機能
Low Loss IGBT:
IGD06N60T
TRENCHSTOPSeries
q
IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Variable Speed Drive for washing machines and air conditioners
Buck converters
C
G
E
PG-TO252-3 (D-PAK)
Type
IGD06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
G06T60
Package
PG-TO252-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
reflow soldering, MSL1
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
12
6
18
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.2, 20.09.2013

1 Page



IGD06N60T pdf, ピン配列
IGD06N60T
TRENCHSTOPSeries
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode used IDP06E60
min.
-
-
-
-
-
-
-
Value
typ.
9
6
130
58
0.09
0.11
0.2
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG= 23
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode used IDP06E60
min.
-
-
-
-
-
-
-
Value
typ.
9
8
165
84
0.14
0.18
0.335
Unit
max.
- ns
-
-
-
- mJ
-
-
IFAG IPC TD VLS
3
Rev. 2.2, 20.09.2013


3Pages


IGD06N60T 電子部品, 半導体
t d(off)
tf
100ns
td(on)
10ns
IGD06N60T
TRENCHSTOPSeries
q
td(off)
100ns
tf
10ns
td(on)
tr
tr
1ns
0A 3A 6A 9A 12A 15A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
1ns
    
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
100ns td(off)
tf
td(on)
10ns
tr
1ns
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
6V
5V max.
4V typ.
3V
m in .
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.18mA)
IFAG IPC TD VLS
6
Rev. 2.2, 20.09.2013

6 Page





ページ 合計 : 12 ページ
PDF
ダウンロード
[ IGD06N60T.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IGD06N60T

There is a function of IGBT.

Infineon
Infineon

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC
FDMS86368

N-Channel Power Trench, 80V, 80A, 4.5mΩ.

Fairchild
Fairchild
2SC2456

Here is a Color TV Horizontal Driver, Vceo=300V, TO-126 Package.

Toshiba
Toshiba

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap