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Datasheet BTS41K0S-ME-N PDF ( 特性, スペック, ピン接続図 )

部品番号 BTS41K0S-ME-N
部品説明 Smart High-Side NMOS-Power Switch
メーカ Infineon
ロゴ Infineon ロゴ 
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BTS41K0S-ME-N Datasheet, BTS41K0S-ME-N PDF,ピン配置, 機能
BTS41k0S-ME-N
Smart High-Side NMOS-Power Switch
Datasheet
Rev 1.1, 2012-05-08
Automotive Power

1 Page



BTS41K0S-ME-N pdf, ピン配列
Smart High-Side NMOS-Power Switch
BTS41k0S-ME-N
1 Overview
Features
• Current controlled input
• Capable of driving all kind of loads (inductive, capacitive and resitive)
• Negative voltage clamped at output with inductive loads
• Current limitation
• Very low standby current
• Thermal shutdown with restart
• Overload protection
• Short circuit protection
• Overvoltage protection (including load dump)
• Reverse battery protection
• Loss of GND and loss of Vbb protection
• ESD-Protection
• Improved electromagnetic compatibility (EMC)
• Green Product (RoHS compliant)
• AEC Qualified
PG-SOT223-4
Description
The BTS41k0S-ME-N is a protected 1 Ω single channel Smart High-Side NMOS-Power Switch in a PG-SOT223-
4 package with charge pump and current controlled input, monolithically integrated in a smart power technology.
Product Summary
Overvoltage protection VS(AZ) = min.62V
Operating voltage range 4,9V < VS < 45V
On-state resistance RON typ 1Ω
Operating Temperature range Tj = -40°C to 150°C
Application
• All types of resistive, inductive and capacitive loads in automotive applications
• Current controlled power switch for 12V, 24V and 45V DC automotive and industrial applications
• Driver for electromagnetic relays
• Signal amplifier
Type
BTS41k0S-ME-N
Datasheet
Package
PG-SOT223-4
3
Marking
41k0SN
Rev 1.1, 2012-05-08


3Pages


BTS41K0S-ME-N 電子部品, 半導体
BTS41k0S-ME-N
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Absolute maximum ratings 1)Tj = -40°C to 150°C all voltages with respect to ground,
currents flowing into the device unless otherwise specified in “Terms”
Pos.
Parameter
Symbol Limit values
Min.
Max.
Supply voltage VS
4.1.1 Voltage
Output stage OUT
VS 60
4.1.2
Output Current; (Short circuit current see
electrical characteristics)
I OUT
Input IN
4.1.3 Input Current
Temperatures
I IN -15 15
4.1.4 Junction Temperature
4.1.5 Storage Temperature
Power dissipation
Tj -40
Tstg -55
150
150
4.1.6
Ta = 25 °C
P tot
Device on 50mm*50mm*1.5mm epoxy PCB
FR4 with 6 cm2 (one layer, 70mm thick)
copper area for Vbb connection. PCB is
vertical without blown air
1.7
Inductive load switch-off energy dissipation
4.1.7
Tj = 150 °C; IL=0.15A; single pulse 1)
Load dump protection
EAS
1000
4.1.8
VLoadDump =VA + VS
RL=2Ω; td = 400ms; VIN = H or L
IL=0.15A; VS= 13.5V
VS= 27V
VLoadDump is set up without the device under
test connected to the generator per ISO
7637-1 and DIN 40839
VLoadDump
VLoadDump
93.5
127
ESD Susceptibility
4.1.9
4.1.10
ESD susceptibility (input pin)
ESD susceptibility (all other pins)
VESD
VESD
1) Not subject to production test, specified by design
2) ESD susceptibility HBM according to EIA/JESD 22-A 114.
-1
-5
1
5
Unit Conditions
V
A self limited
mA
°C
°C
W
mJ
V
V
kV HBM2)
kV HBM2)
Note: Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Integrated protection
functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are
considered as “outside” the normal operating range. Protection functions are not designed for continuous or repetitive
operation.
Datasheet
6 Rev 1.1, 2012-05-08

6 Page





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