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Datasheet H02N60SF PDF ( 特性, スペック, ピン接続図 )

部品番号 H02N60SF
部品説明 N-Channel Power Field Effect Transistor
メーカ HI-SINCERITY
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H02N60SF Datasheet, H02N60SF PDF,ピン配置, 機能
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab 1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60S Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Derate above 25°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification

1 Page



H02N60SF pdf, ピン配列
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 3/6
TO-252 Dimension
M Marking:
A a1 Pb Free Mark
Pb-Free: " . " (Note)
Normal: None H
J
F 02N60S
1
a5
L
C
G
23
a2
H
a1
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
N Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.35 6.80
C 4.80 5.50
F 1.30 1.70
G 5.40 6.25
H 2.20 3.00
L 0.40 0.90
M 2.20 2.40
N 0.90 1.50
a1 0.40 0.65
a2 - *2.30
a5 0.65 1.05
*: Typical, Unit: mm
A
B
C
D
a1
E
J
K
a2
y2
F
y1
M
a1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HJ
0 2N6 0S
GI
y1
H
L
a2
y1
N
a1
O
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM Min. Max.
A 6.40 6.80
B - 6.00
C 5.04 5.64
D - *4.34
E 0.40 0.80
F 0.50 0.90
G 5.90 6.30
H 2.50 2.90
I 9.20 9.80
J 0.60 1.00
K - 0.96
L 0.66 0.86
M 2.20 2.40
N 0.70 1.10
O 0.82 1.22
a1 0.40 0.60
a2 2.10 2.50
y1 -
5o
y2 -
3o
*: Typical, Unit: mm
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification


3Pages


H02N60SF 電子部品, 半導体
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
TP
TL
Tsmax
Ramp-up
tP
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Products
Pb devices.
Pb-Free devices.
Peak temperature
245oC ±5oC
260oC +0/-5oC
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 6/6
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HSMC Product Specification

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