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SPB18P06PG の電気的特性と機能

SPB18P06PGのメーカーはInfineonです、この部品の機能は「SIPMOS Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 SPB18P06PG
部品説明 SIPMOS Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 




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SPB18P06PG Datasheet, SPB18P06PG PDF,ピン配置, 機能
SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Product Summary
V DS
R DS(on),max
ID
SPB18P06P G
-60 V
0.13
-18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information
1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=100 °C
T A=25 °C
Marking Lead free
18P06P Yes
Packing
Non dry
Value
steady state
-18.7
-13.2
-74.8
Unit
A
Avalanche energy, single pulse
E AS I D=18.7 A, R GS=25
151 mJ
Avalanche energy, periodic limited by
Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=18.7 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
8
-6
±20
81.1
"-55 ... +175"
260 °C
55/175/56
kV/µs
V
W
°C
Rev 1.6
page 1
2012-09-07

1 Page





SPB18P06PG pdf, ピン配列
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
SPB18P06P G
min.
Values
typ.
Unit
max.
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-30 V, V GS=-
10 V, I D=-13.2 A,
R G=2.7
-
-
-
-
-
-
-
690 860 pF
230 290
95 120
12 18 ns
5.8 8.7
25 37
37
11 16.5
Q gs
Q gd
Qg
V plateau
V DD=-48 V, I D=-
18.6 A, V GS=0 to -10 V
-
-
-
-
-4.1
-11
-21
-5.94
-5.5 nC
-17
-28
-V
IS
I S,pulse
V SD
t rr
Q rr
T A=25 °C
V GS=0 V, I F=18.6 A,
T j=25 °C
V R=30 V, I F=|I S|,
di F/dt =100 A/µs
- - -18.6 A
- - -74.8
- -0.99 -1.33 V
- 70 105 ns
- 139 208 nC
Rev 1.6
page 3
2012-09-07


3Pages


SPB18P06PG 電子部品, 半導体
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=-13.2 A; V GS=-10 V
SPB18P06P G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=-1000 µA
300 5
4.5
250
4 max.
200
98 %
150
3.5
3 typ.
2.5
100
typ.
2
min.
1.5
1
50
0.5
0
-60 -20 20
60 100 140 180
T j [°C]
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
Coss
Crss
102
25 °C, 98%
101
175 °C, 98%
100
10-1
25 °C, typ
175 °C, typ
101
0
Rev 1.6
5 10 15 20 25
-V DS [V]
10-2
0 0.5 1 1.5 2 2.5 3
-V SD [V]
page 6
2012-09-07

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SPB18P06P

SIPMOS Power-Transistor

Infineon Technologies
Infineon Technologies
SPB18P06P

SIPMOS Power-Transistor

Infineon Technologies
Infineon Technologies
SPB18P06PG

SIPMOS Power-Transistor

Infineon
Infineon


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