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18P06P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 18P06P
部品説明 SIPMOS Power-Transistor
メーカ Infineon
ロゴ Infineon ロゴ 

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18P06P Datasheet, 18P06P PDF,ピン配置, 機能
SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Product Summary
V DS
R DS(on),max
ID
SPB18P06P G
-60 V
0.13
-18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information
1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=100 °C
T A=25 °C
Marking Lead free
18P06P Yes
Packing
Non dry
Value
steady state
-18.7
-13.2
-74.8
Unit
A
Avalanche energy, single pulse
E AS I D=18.7 A, R GS=25
151 mJ
Avalanche energy, periodic limited by
Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=18.7 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
8
-6
±20
81.1
"-55 ... +175"
260 °C
55/175/56
kV/µs
V
W
°C
Rev 1.6
page 1
2012-09-07

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