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TVS Diodes
Transient Voltage Suppressor Diodes
TVS3V3L4U
Low Capacitance ESD / Transient / Surge Protection Array
TVS3V3L4U
Data Sheet
Revision 2.4, 2013-02-06
Final
Power Management & Multimarket
1 page  
2 Electrical Characteristics
TVS3V3L4U
Electrical Characteristics
2.1 Maximum Ratings
Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
ESD discharge1)
air
contact
VESD
-30
-30
Peak pulse current (tP = 8/20 μs)2)
IPP
-20
Peak pulse power
tP = 8/20 μs2)
tP = 100 ns3)
PPK
–
–
Operating temperature
TOP -55
Storage temperature
Tstg -55
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5. PPK is calculated by IPP x VCL.
3) Please refer to AN210[1]. PPK is calculated by ITLP x VCL.
Typ.
–
–
–
–
–
–
–
Max.
30
30
20
154
1044
125
150
Unit
kV
A
W
°C
°C
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
FinalData Sheet
5 Revision 2.4, 2013-02-06
5 Page 
TVS3V3L4U
Typical Characteristic
90
TVS3V3L4U
80 RDYN
70
60
50
40
30
20
10
0
456
40
30
RDYN=0.085Ω
20
10
78
VTLP [V]
9
0
10 11 12
Figure 3-7 TLP characteristics, reverse pulse
90
TVS3V3L4U
80 RDYN
70
60
50
40
30
20
10
0
02
46
VTLP [V]
Figure 3-8 TLP characteristics, forward pulse
RDYN=0.117Ω
8 10
40
30
20
10
0
12
FinalData Sheet
11 Revision 2.4, 2013-02-06
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet TVS3V3L4U.PDF ] | |
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