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PDF SUD42N03-3m9P Data sheet ( Hoja de datos )
| Número de pieza | SUD42N03-3m9P | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SUD42N03-3m9P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0039 at VGS = 10 V
0.0045 at VGS = 4.5 V
ID (A)
107d
103d
Qg (Typ.)
67
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
- Synchronous Buck Low Side
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs)
TC = 25 °C (Silicon Limited)
TC = 70 °C (Silicon Limited)
TC = 25 °C (Package Limited)
Avalanche Current
Single Avalanche Energya
L = 0.1 mH
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °Cc
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
107d
85d
42
120
45
101
73.5b
2.5
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
50
Junction-to-Case (Drain)
RthJC
1.7
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A.
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
Unit
°C/W
www.vishay.com
1
1 page  
SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 1000
Limited by RDS(on)*
100
100 µs
TJ = 150 °C
TJ = 25 °C
10
10
1
1 ms
10 ms
100 ms,
1 s, 10 s, DC
1
10-5
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Avalanche Current Capability vs. Time
2
1 Duty Cycle = 0.5
0.1 TC = 25 °C
Single Pulse
0.01
0.1
1
BVDSS
Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66824.
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
www.vishay.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUD42N03-3m9P.PDF ] | |
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