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SIZ998DT の電気的特性と機能

SIZ998DTのメーカーはVishayです、この部品の機能は「Dual N-Channel 30V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIZ998DT
部品説明 Dual N-Channel 30V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIZ998DT Datasheet, SIZ998DT PDF,ピン配置, 機能
www.vishay.com
SiZ998DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-
1
Channel-
2
VDS (V)
30
30
RDS(on) (Ω) (MAX.)
0.0067 at VGS = 10 V
0.0100 at VGS = 4.5 V
0.0028 at VGS = 10 V
0.0038 at VGS = 4.5 V
ID (A) a, g Qg (TYP.)
20
5.4 nC
20
60
13.2 nC
60
PowerPAIR® 6 x 5 G2
S2
S2
S2
6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
Ordering Information:
SiZ998DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFETs
• SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer/server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
20 a
60 a
20 a
60 a
18.8 b, c
32.8 b, c
15 c
26.2 b, c
90 130
16.8 27.4
3.2 b, c
4 b, c
15 20
11.25
20
20.2 32.9
12.9
21.1
3.8 b, c
4.8 b, c
2.4 b, c
3.1 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26 33 21 26
4.7 6.2 3 3.8
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2.
g. TC = 25 °C.
S15-0144-Rev. A, 02-Feb-15
1
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIZ998DT pdf, ピン配列
www.vishay.com
SiZ998DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Dynamic a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Channel-1
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Channel-2
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Current (t = 100 μs) ISM
Body Diode Voltage
VSD
IS = 10 A, VGS = 0 V
IS = 2 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Channel-1
Qrr IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Channel-2
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
25
65
65
10
17
10
10
10
15
25
20
15
22
10
10
-
-
-
-
0.8
0.41
30
47
11
55
18
27
12
20
MAX. UNIT
30
50
130
130
20
34
20
20
ns
20
30
50
40
30
44
20
20
20
60
90
130
1.2
0.53
60
94
22
110
-
-
-
-
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0144-Rev. A, 02-Feb-15
3
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIZ998DT 電子部品, 半導体
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 20
SiZ998DT
Vishay Siliconix
30
Package Limited
20
15
10
10 5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0144-Rev. A, 02-Feb-15
6
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
SIZ998DT

Dual N-Channel 30V (D-S) MOSFET

Vishay
Vishay


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