DataSheet.jp

SIZ914DT の電気的特性と機能

SIZ914DTのメーカーはVishayです、この部品の機能は「Dual N-Channel 30V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIZ914DT
部品説明 Dual N-Channel 30V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとSIZ914DTダウンロード(pdfファイル)リンクがあります。

Total 14 pages

No Preview Available !

SIZ914DT Datasheet, SIZ914DT PDF,ピン配置, 機能
SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V) RDS(on) () (Max.)
0.00640 at VGS = 10 V
30
0.01000 at VGS = 4.5 V
30 0.00137 at VGS = 10 V
0.00194 at VGS = 4.5 V
ID (A)g Qg (Typ.)
16a
7.2 nC
16a
40a
30.1 nC
40a
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information:
SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D1
• CPU Core Power
• Computer/Server Peripherals
• Synchronous Buck Converter G1
• POL
• Telecom DC/DC
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+ 20, - 16
16a 40a
16a 40a
16a, b, c
40a, b, c
15.5b, c
38.8b, c
80 100
19
3.25b, c
28
4.3b, c
10 20
5 20
22.7 100
14.5
3.9b, c
2.5b, c
64
5.2b, c
3.3b, c
- 55 to 150
260
S1/D2
Schottky
Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
25 32 19 24
4.4 5.5
1 1.25
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
Document Number: 62905
For technical questions, contact: [email protected]
www.vishay.com
S13-2181-Rev. A, 14-Oct-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIZ914DT pdf, ピン配列
SiZ914DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
TC = 25 °C
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
trr
Qrr
IS = 10 A, VGS = 0 V
IS = 2 A, VGS = 0 V
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
16
40
11
127
15
40
5
19
10
12
10
30
20
35
5
7
0.8
0.33
15
62
4
96
9
30.5
6
31.5
Max.
24
60
20
190
23
60
10
29
20
20
20
45
30
53
10
14
40
40
80
100
1.2
0.42
23
93
8
144
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 62905
For technical questions, contact: [email protected]
www.vishay.com
S13-2181-Rev. A, 14-Oct-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIZ914DT 電子部品, 半導体
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
52 30
24
39
18
26
12
13
6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 62905
6 S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



ページ 合計 : 14 ページ
 
PDF
ダウンロード
[ SIZ914DT データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
SIZ914DT

Dual N-Channel 30V (D-S) MOSFET

Vishay
Vishay


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap