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SIZ702DTのメーカーはVishayです、この部品の機能は「N-Channel 30V (D-S) MOSFET」です。 |
部品番号 | SIZ702DT |
| |
部品説明 | N-Channel 30V (D-S) MOSFET | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとSIZ702DTダウンロード(pdfファイル)リンクがあります。 Total 14 pages
New Product
N-Channel 30 V (D-S) MOSFETs
SiZ702DT
Vishay Siliconix
PRODUCT SUMMARY
Channel-1
and
Channel-2
VDS (V)
RDS(on) ()
0.0120 at VGS = 10 V
30
0.0145 at VGS = 4.5 V
ID (A)
16a
16a
Qg (Typ.)
6.8 nC
PowerPAIR® 6 x 3.7
Pin 1
G1 3.73 mm
1 D1
2
D1
D1
3
G2
6 S2
5
S1/D2
(Pin 7)
S2
4
6 mm
Ordering Information:
SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Low Current DC/DC
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
16a
16a
13.8b, c
14b, c
11b, c
11.2b, c
50
16a 16a
3.2b, c
3.7b, c
18
16
27 30
17.4 19
3.9b, c
2.5b, c
4.5b, c
2.9b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24 32 21 28
3.5 4.6 3.2 4.2
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2.
Document Number: 65525
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 10 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
15
12
20
10
10
12
20
10
0.8
20
10
11
9
Max.
25
20
30
15
15
20
30
15
16
50
1.2
40
20
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65525
www.vishay.com
S11-2379-Rev. B, 28-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 30
25
30
20
20
Package Limited
10
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
Document Number: 65525
6 S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
ページ | 合計 : 14 ページ | ||
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部品番号 | 部品説明 | メーカ |
SIZ702DT | N-Channel 30V (D-S) MOSFET | Vishay |