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PDF SIZ342DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ342DT | |
| Descripción | Dual N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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www.vishay.com
SiZ342DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
and
Channel-2
VDS (V)
30
RDS(on) (Ω) MAX.
0.0115 at VGS = 10 V
0.0153 at VGS = 4.5 V
ID (A)
30 a
27.5
Qg (Typ.)
4.5 nC
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
Ordering Information:
SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• PowerPAIR® optimizes high-side and low-side
MOSFETs for synchronous buck converters
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
LIMIT
Drain-Source Voltage
VDS 30
Gate-Source Voltage
TC = 25 °C
VGS
+20 / -16
30 a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
26.5
15.6 b, c
12.4 b, c
Pulsed Drain Current (t = 100 μs)
IDM 100
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
13.9
3.1 b, c
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
TC = 25 °C
16.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
10.7
3.7 b, c
2.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
-55 to 150
260
UNIT
V
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0031-Rev. B, 19-Jan-15
1
Document Number: 62949
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
SiZ342DT
Vishay Siliconix
CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.030
ID =14.4 A
10 TJ = 150 °C
TJ = 25 °C
1
0.024
0.018
0.012
TJ = 125 °C
TJ = 25 °C
0.006
0.1
0.0
0.3 0.6 0.9
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.85
ID = 250 μA
1.6
0.000
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
1.35 30
1.1 20
0.85 10
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1 1 10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by IDM
Limited by RDS(on)*
10
100 μs
1 ms
1 10 ms
100 ms
10 s, 1 s
0.1
DC
TA = 25 °C
0.01
0.1
1
BVDSS Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0031-Rev. B, 19-Jan-15
5
Document Number: 62949
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SIZ342DT.PDF ] | |
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