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SIS822DNT の電気的特性と機能

SIS822DNTのメーカーはVishayです、この部品の機能は「N-Channel 30V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIS822DNT
部品説明 N-Channel 30V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIS822DNT Datasheet, SIS822DNT PDF,ピン配置, 機能
www.vishay.com
SiS822DNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A) a
12
12
0.8 mm
Thin PowerPAK® 1212-8 Single
D
D
D
6
D
7
8
5
Qg (TYP.)
3.8 nC
3.3 mm
1
Top View
3.3 mm
1
3
2
S
S
4S
G
Bottom View
Ordering Information:
SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Thin 0.8 mm profile
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook PC
- System power
- Load switch
• Synchronous buck high-side
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TJ, Tstg
LIMIT
30
± 20
12 a
12 a
8.7 b, c
7 b, c
30
12 a
2.7 b, c
5
1.25
15.6
10
3.2 b, c
2 b, c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
32
6.5
39
°C/W
8
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 81 °C/W.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-1340-Rev. A, 30-Jun-14
1
Document Number: 62965
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIS822DNT pdf, ピン配列
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30 10
VGS = 10 thru 4 V
25
8
20
6
15
VGS = 3 V
4
10
2
5
0
0.0
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
3.0
Output Characteristics
0
0.0
SiS822DNT
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
0.035
600
0.030
0.025
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
500 Ciss
400
300
200
Coss
100
Crss
0
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
10
ID = 7.8 A
8
6
VDS = 15 V
4
2
VDS = 24 V
1.8
ID = 7.8 A
1.6
1.4
1.2
1.0
0.8
VGS = 10 V
VGS = 4.5 V
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-1340-Rev. A, 30-Jun-14
3
Document Number: 62965
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIS822DNT 電子部品, 半導体
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiS822DNT
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
10-4
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62965.
S14-1340-Rev. A, 30-Jun-14
6
Document Number: 62965
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
SIS822DNT

N-Channel 30V (D-S) MOSFET

Vishay
Vishay


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