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SIS780DN の電気的特性と機能

SIS780DNのメーカーはVishayです、この部品の機能は「N-Channel 30V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIS780DN
部品説明 N-Channel 30V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIS780DN Datasheet, SIS780DN PDF,ピン配置, 機能
New Product
SiS780DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0135 at VGS = 10 V
30
0.0175 at VGS = 4.5 V
ID (A)
18a
18a
Qg (Typ.)
7.3 nC
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiS780DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET® Gen III
Power MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
G
N-Channel MOSFET
S
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
30
± 20
18a
18a
12b, c
9.5b, c
50
18a
2.9b, c
15
11.25
27.7
17.7
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
29
3.6
36
°C/W
4.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 67941
www.vishay.com
S11-1178-Rev. A, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIS780DN pdf, ピン配列
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
10
8
SiS780DN
Vishay Siliconix
30 6
20
10
0
0
0.022
VGS = 3 V
VGS = 2 V
0.5 1 1.5 2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
4
TC = 25 °C
2
TC = - 55 °C
TC = 125 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
5
0.019
0.016
VGS = 4.5 V
800 Ciss
600
0.013
0.010
VGS = 10 V
0.007
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
400
200
0
0
Coss
Crss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2
0
0 3.4 6.8 10.2 13.6 17.0
Qg - Total Gate Charge (nC)
Gate Charge
1.8
ID = 15 A
1.6
1.4
VGS = 10 V
1.2 VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67941
www.vishay.com
S11-1178-Rev. A, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIS780DN 電子部品, 半導体
New Product
SiS780DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67941.
www.vishay.com
Document Number: 67941
6 S11-1178-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
SIS780DN

N-Channel 30V (D-S) MOSFET

Vishay
Vishay


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