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SIS626DN の電気的特性と機能

SIS626DNのメーカーはVishayです、この部品の機能は「N-Channel 25V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIS626DN
部品説明 N-Channel 25V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIS626DN Datasheet, SIS626DN PDF,ピン配置, 機能
www.vishay.com
SiS626DN
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
RDS(on) (Ω) (Max.)
0.0090 at VGS = 10 V
0.0096 at VGS = 4.5 V
0.0115 at VGS = 2.5 V
ID (A) f
16 g
16 g
16 g
Qg (Typ.)
18.2 nC
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
3.3 mm
1
Top View
3.3 mm
1
2S
3S
4S
G
Bottom View
Ordering Information:
SiS626DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100% Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor switch
• Load switch
• Synchronous buck
- High-side
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
25
± 12
16 g
16 g
15.1 a, b
11.7 a, b
32
16 g
3.1 a, b
20
20
52
33
3.7 a, b
2.4 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
28
2
34
°C/W
2.4
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
S15-2185-Rev. A, 14-Sep-15
1
Document Number: 74712
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIS626DN pdf, ピン配列
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70 50
VGS = 10 V thru 3 V
56
40
42
VGS = 2 V
30
28 20
SiS626DN
Vishay Siliconix
TC = 25 °C
14
0
0.0
VGS = 1 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
2.5
Output Characteristics
10
TC = 125 °C
0
0.0
TC = -55 °C
0.6 1.2 1.8 2.4
VGS - Gate-to-Source Voltage (V)
3.0
Transfer Characteristics
0.011
0.010
0.009
VGS = 2.5 V
2500
2000
Ciss
1500
0.008
0.007
VGS = 4.5 V
VGS = 10 V
0.006
0
10 20 30 40
ID - Drain Current (A)
50
On-Resistance vs. Drain Current and Gate Voltage
1000
500
Coss
Crss
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
25
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2.0
ID = 10 A
1.7
1.4
1.1
VGS = 10 V
VGS = 4.5 V
2 0.8
0
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
0.5
-50 -25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-2185-Rev. A, 14-Sep-15
3
Document Number: 74712
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIS626DN 電子部品, 半導体
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiS626DN
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
0.001
Single Pulse
0.01
0.1 1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74712.
S15-2185-Rev. A, 14-Sep-15
6
Document Number: 74712
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
SIS626DN

N-Channel 25V (D-S) MOSFET

Vishay
Vishay


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