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SIS496EDNT の電気的特性と機能

SIS496EDNTのメーカーはVishayです、この部品の機能は「N-Channel 30V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIS496EDNT
部品説明 N-Channel 30V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIS496EDNT Datasheet, SIS496EDNT PDF,ピン配置, 機能
N-Channel 30 V (D-S) MOSFET
SiS496EDNT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0048 at VGS = 10 V
0.0062 at VGS = 4.5 V
ID (A)a
50
50
Qg (Typ.)
14 nC
Thin PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8
0.75 mm
D
7
D
6
D
5
Bottom View
Ordering Information:
SiS496EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Thin 0.75 mm height
• Typical ESD performance 2500 V
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converter
• Battery Switch
• Power Management
For Mobile Computing
G
D
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 100 µs)
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
TA = 70 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C
IDM
IAS
EAS
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
30
± 20
50a
50a
20.4b, c
16.3b, c
200
25
31
43.3
3.2b, c
52
33
3.8b, c
2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is ex-
posedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guar-
anteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 62867
For technical questions, contact: [email protected]
www.vishay.com
S13-1945-Rev. B, 16-Sep-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SIS496EDNT pdf, ピン配列
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
TJ = 25 °C
0.040
0.030
0.020
0.010
0.000
0
6 12 18 24
VGS - Gate-Source Voltage (V)
30
Gate Source Voltage vs. Gate Current
10-1
10-2
10-3
10-4 TJ = 150 °C
10-5
10-6
10-7
TJ = 25 °C
10-8
10-9
0
11 22 33 44
VGS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
50
40
30
20
10
0
0
0.0075
VGS = 10 V thru 4 V
VGS = 3 V
0.5 1 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
0.006
0.0045
0.003
VGS = 4.5 V
VGS = 10 V
0.0015
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
2
1.5
TC = 25 °C
1
0.5
0
0
TC = 125 °C
TC = - 55 °C
0.6 1.2 1.8 2.4
3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2100
1680
1260
Ciss
840
420 Coss
Crss
0
06
12 18 24
VDS - Drain-to-Source Voltage (V)
30
Capacitance
Document Number: 62867
For technical questions, contact: [email protected]
www.vishay.com
S13-1945-Rev. B, 16-Sep-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SIS496EDNT 電子部品, 半導体
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 81 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 Single Pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62867.
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 62867
6 S13-1945-Rev. B, 16-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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部品番号部品説明メーカ
SIS496EDNT

N-Channel 30V (D-S) MOSFET

Vishay
Vishay


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