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PDF SIS376DN Data sheet ( Hoja de datos )
| Número de pieza | SIS376DN | |
| Descripción | N-Channel 20V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 20 V (D-S) MOSFET
SiS376DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0058 at VGS = 10 V
20
0.0084 at VGS = 4.5 V
ID (A)a
35
35
Qg (Typ.)
7.7 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: SiS376DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Note book PC
- Synchronous Buck Converters
- High Side
• POL
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
± 20
35a
35a
22b, c
17.8b, c
50
25
31
27
3b, c
33
21
3.6b, c
2.3b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
2.9
Maximum
35
3.8
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 63304
www.vishay.com
S11-1660-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
50
40
30 Package Limited
20
10
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
40 2.0
SiS376DN
Vishay Siliconix
32 1.6
24 1.2
16 0.8
8 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
150
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63304
www.vishay.com
S11-1660-Rev. A, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIS376DN.PDF ] | |
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