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SIR862DP の電気的特性と機能

SIR862DPのメーカーはVishayです、この部品の機能は「N-Channel 25V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIR862DP
部品説明 N-Channel 25V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIR862DP Datasheet, SIR862DP PDF,ピン配置, 機能
New Product
N-Channel 25-V (D-S) MOSFET
SiR862DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0028 at VGS = 10 V
25
0.0035 at VGS = 4.5 V
ID (A)a, e
50
50
Qg (Typ.)
28.4 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: SiR862DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• DC/DC Conversion
- Low-Side Switch
• Notebook
• Server
• Game Console
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)f, g
Limit
25
± 20
50e
50e
32b, c
22.8b, c
70
50e
4.7b, c
40
80
69
44.4
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
19
1.2
24 °C/W
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 65 °C/W.
e. Package limited.
f. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
g. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65672
S10-0041-Rev. A, 11-Jan-10
www.vishay.com
1

1 Page





SIR862DP pdf, ピン配列
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70 10
SiR862DP
Vishay Siliconix
56 VGS = 10 V thru 3 V
42
8
TC = 125 °C
6
28
14
0
0.0
0.0030
0.0028
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
VGS = 4.5 V
4
TC = - 55 °C
2
TC = 25 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4600
3680
Ciss
5
0.0026
2760
0.0024
0.0022
VGS = 10 V
0.0020
0
14 28 42 56 70
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 5 V
6
VDS = 10 V
4
VDS = 15 V
1840
Coss
920
Crss
0
0
5
10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 10 A
1.4
VGS = 10 V
25
1.2 VGS = 4.5 V
1.0
2 0.8
0
0 13 26 39 52
Qg - TotalGateCharge (nC)
Gate Charge
Document Number: 65672
S10-0041-Rev. A, 11-Jan-10
65
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - JunctionTemperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3


3Pages


SIR862DP 電子部品, 半導体
SiR862DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65672.
www.vishay.com
6
Document Number: 65672
S10-0041-Rev. A, 11-Jan-10

6 Page



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部品番号部品説明メーカ
SIR862DP

N-Channel 25V (D-S) MOSFET

Vishay
Vishay


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