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PDF SIR774DP Data sheet ( Hoja de datos )
| Número de pieza | SIR774DP | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiR774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0026 at VGS = 10 V
0.0034 at VGS = 4.5 V
ID (A)a
40
40
PowerPAK® SO-8
Qg (Typ.)
28.5 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET®
Power MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• VRM, POL, Server
• Notebook
- Low-Side
- Vcore
- Memory
D
Schottky Diode
G
Ordering Information:
SiR774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L =0.1 mH
VDS
VGS
ID
IDM
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 20
40a
40a
32b, c
25.6b, c
80
40a
8b, c
30
45
62.5
40
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
1.6
25
°C/W
2.0
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 63285
www.vishay.com
S11-1663-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
SiR774DP
Vishay Siliconix
96
72
48 Package Limited
24
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
75 2.5
60 2.0
45 1.5
30 1.0
15 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63285
www.vishay.com
S11-1663-Rev. A, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIR774DP.PDF ] | |
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