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SIR770DP の電気的特性と機能

SIR770DPのメーカーはVishayです、この部品の機能は「Dual N-Channel 30 V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SIR770DP
部品説明 Dual N-Channel 30 V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SIR770DP Datasheet, SIR770DP PDF,ピン配置, 機能
SiR770DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS
RDS(on) ()
Channel-1 30 0.021 at VGS = 10 V
0.025 at VGS = 4.5 V
Channel-2 30 0.021 at VGS = 10 V
0.025 at VGS = 4.5 V
ID (A)a, f
8.0
8.0
8.0
8.0
Qg (Typ.)
6.6
6.6
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V at 1.0 A
IF (A)a
4.0
PowerPAK SO-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Fixed Telecom
- Server
• Synchronous Converter
6.15 mm
S1
1
G1
2
5.15 mm
S2
3 G2
4
D1
8 D1
7
D2
6 D2
5
Bottom View
Ordering Information: SiR770DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
Schottky Diode
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS ± 20
30
± 20
V
TC = 25 °C
8f 8f
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
8f
8b, c, f
8f
8b, c, f
TA = 70 °C
8b, c, f
8b, c, f
Pulsed Drain Current (300 µs)
IDM 35
35 A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
8f
3b, c
8f
3b, c
Pulsed Source-Drain Current
ISM 35
35
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.2
15
11.2 mJ
TC = 25 °C
17.8 17.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
11.4
3.6b, c
11.4
3.6b, c
W
TA = 70 °C
2.3b, c
2.3b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Package limited.
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
1

1 Page





SIR770DP pdf, ピン配列
SiR770DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Dynamica
VDS = 15 V, VGS = 10 V, ID = 10 A
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 10 A
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 2 A
IS = 1 A
trr
Channel-1
Qrr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta Channel-2
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min. Typ.a Max.
14 21
14 21
6.6 10
6.6 10
2.5
2.5
1.7
1.7
0.3 1.4 2.8
0.3 1.4 2.8
14 28
14 28
10 20
10 20
15 30
15 30
8 16
8 16
10 20
10 20
8 16
8 16
18 36
18 36
8 16
8 16
8
8
35
35
0.75 1.1
0.45 0.50
13 26
13 26
6.5 13
4.5 9
8
6
5
7
Unit
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10
www.vishay.com
3


3Pages


SIR770DP 電子部品, 半導体
SiR770DP
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
20
15
10 Package Limited
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
25 2.0
20 1.6
15 1.2
10 0.8
5 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 66818
S10-1923-Rev. A, 23-Aug-10

6 Page



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部品番号部品説明メーカ
SIR770DP

Dual N-Channel 30 V (D-S) MOSFET

Vishay
Vishay


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