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PDF SIR164DP Data sheet ( Hoja de datos )
| Número de pieza | SIR164DP | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
SiR164DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0025 at VGS = 10 V
30
0.0032 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a, e
50
50
Qg (Typ.)
40.6 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• New MOSFET Technology Optimized for
Ringing Reduction in Switching Application
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: SiR164DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• DC/DC
• Notebook CPU Core
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)f, g
Limit
30
± 20
50e
50e
33.3b, c
26.5b, c
70
50e
4.7b, c
40
80
69
44.4
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
19
1.2
24 °C/W
1.8
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 65 °C/W.
e. Package limited.
f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 64827
S09-0701-Rev. A, 27-Apr-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
135
SiR164DP
Vishay Siliconix
108
81
Package Limited
54
27
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
90 2.5
72 2.0
54 1.5
36 1.0
18 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64827
S09-0701-Rev. A, 27-Apr-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIR164DP.PDF ] | |
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