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H40T60 の電気的特性と機能

H40T60のメーカーはInfineonです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 H40T60
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ Infineon
ロゴ Infineon ロゴ 




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H40T60 Datasheet, H40T60 PDF,ピン配置, 機能
Soft Switching Series
IHW40N60T
q
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Features:
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
C
Short circuit withstand time – 5µs
TrenchStop® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking
IHW40N60T 600V 40A
1.55V
175°C H40T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
600
80
40
120
120
40
20
60
±20
±25
5
303
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep. 08

1 Page





H40T60 pdf, ピン配列
Soft Switching Series
IHW40N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=40A,
VGE=0/15V,
RG=5.6 ,
LCσσ11))==4300npHF,
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
-
-
186
66.3
-
0.92
0.92
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175°C,
VCC=400V,IC=40A,
VGE=0/15V,
RG= 5.6
LCσσ11))==4300npHF,
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
-
-
196
76.5
-
1.4
1.4
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.3 Sep. 08


3Pages


H40T60 電子部品, 半導体
100ns
Soft Switching Series
IHW40N60T
q
td(off)
tf
td(off)
100ns
tf
10ns
0A
20A 40A 60A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 5.6,
Dynamic test circuit in Figure E)
10ns
10Ω
20Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 40A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
6V
max.
5V
typ.
min.
4V
10ns
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 40A, RG=5.6,
Dynamic test circuit in Figure E)
3V
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)
Power Semiconductors
6
Rev. 2.3 Sep. 08

6 Page



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部品番号部品説明メーカ
H40T60

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon


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