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H40T60 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H40T60
部品説明 IGBT
メーカ Infineon
ロゴ Infineon ロゴ 



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H40T60 Datasheet, H40T60 PDF,ピン配置, 機能
Soft Switching Series
IHW40N60T
q
Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode
Features:
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
C
Short circuit withstand time – 5µs
TrenchStop® and Fieldstop technology for 600 V applications
G
E
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C Tj,max
Marking
IHW40N60T 600V 40A
1.55V
175°C H40T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
600
80
40
120
120
40
20
60
±20
±25
5
303
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 Sep. 08

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