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Datasheet SUM110N04 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | SUM110N04-03 | N-Channel 40-V (D-S) 200C MOSFET SUM110N04-03
Vishay Siliconix
N-Channel 40-V (D-S) 200_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0028 @ VGS = 10 V
ID (A)
110 a
D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance
APPLICATIONS
D Automotive - ABS - 12-V EPS - Mot |
 Vishay Siliconix |
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| 4 | SUM110N04-04 | N-Channel 40-V (D-S) 175C MOSFET SUM110N04-04
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
FEATURES
rDS(on) (W) ID (A)
110 a
D TrenchFETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature
0.0035 @ VGS = 10 V
APPLICATIONS
D Automotive - ABS - 12-V EPS - Motor Drivers
D
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Vishay Siliconix |
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| 3 | SUM110N04-05H | N-Channel MOSFET SPICE Device Model SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model th |
Vishay Siliconix |
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| 2 | SUM110N04-2m1P | N-Channel 40-V (D-S) MOSFET New Product
SUM110N04-2m1P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0021 at VGS = 10 V 0.0024 at VGS = 4.5 V
ID (A)a, c 110 110
Qg (Typ.) 240 nC
TO-263
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Synchrono |
 Vishay |
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