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PDF IRFZ20 Data sheet ( Hoja de datos )
| Número de pieza | IRFZ20 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
50
VGS = 10 V
17
9.0
3.0
Single
0.10
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Extremely Low RDS(on)
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Parts Per Million Quality
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low RDS(on) MOSFET transistor
requirements. Vishay’s highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
quality!
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltagea
Gate-Source Voltagea
Continuous Drain Current
Pulsed Drain Currentb
VGS at 10 V
TC = 25 °C
TC = 100 °C
Single Pulse Avalanche Energyc
Linear Derating Factor (see fig. 16)
Maximum Power Dissipation (see fig. 16)
Operating Junction and Storage Temperature Range
TC = 25 °C
Soldering Recommendations (Peak Temperature)
for 10 s
SYMBOL
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
LIMIT
50
± 20
15
10
60
5
0.32
40
- 55 to + 150
300 (0.063" (1.6 mm) from case
Notes
a. TJ = 25 °C to 150 °C
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting TJ = 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A
UNIT
V
A
mJ
W/°C
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
1
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFZ20, SiHFZ20
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
VDS
IAS
VDS
tp
VDD
Fig. 12a - Clamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91340
S10-1682-Rev. A, 26-Jul-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFZ20.PDF ] | |
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