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PDF NDD60N900U1 Data sheet ( Hoja de datos )
| Número de pieza | NDD60N900U1 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
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NDD60N900U1
N-Channel Power MOSFET
600 V, 900 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS 600 V
Gate−to−Source Voltage
VGS ±25 V
Continuous Drain
Current RqJC
Steady
State
TC = 25°C
TC = 100°C
ID
5.7 A
3.6
Power Dissipation Steady
– RqJC
State
TC = 25°C
PD
74 W
Pulsed Drain
Current
tp = 10 ms
IDM 20 A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (ID = 2 A)
Peak Diode Recovery (Note 1)
TTSJT,G
IS
EAS
−55 to
+150
5.7
33
°C
A
mJ
dv/dt
15 V/ns
Lead Temperature for Soldering Leads
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. ISD < 5.7 A, di/dt ≤ 400 A/ms, Vpeak < V(BR)DSS
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain) NDD60N900U1
Junction−to−Ambient Steady State
(Note 3)
NDD60N900U1
(Note 2)
NDD60N900U1−1
(Note 2)
NDD60N900U1−35
RqJC
RqJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
Value
1.7
47
99
95
Unit
°C/W
°C/W
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
900 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
4
1 23
IPAK
CASE 369D
STYLE 2
S (3)
4
12
3
DPAK
CASE 369C
STYLE 2
4
12 3
IPAK
CASE 369AD
STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NDD60N900U1/D
1 page  
NDD60N900U1
TYPICAL CHARACTERISTICS
1.15
1.10
1.05
ID = 250 mA
1.00
0.95
0.90
0.85
0.80
0.75
0.70
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Threshold Voltage Variation with
Temperature
10,000
1000
100
10
TJ = 150°C
TJ = 125°C
TJ = 100°C
1
0 100 200 300 400 500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
10,000
COSS
1000 CISS
CRSS
100
10
1
0.1
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
12
11
10
9
8
7
6 QGS
5
QT
VDS
QGD
VGS
350
300
250
200
150
4
3
2
1
VDS = 300 V
TJ = 25°C
ID = 5.9 A
100
50
00
10
100
1000
0
2
4
6
8 10 12 14
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Capacitance Variation
QG, TOTAL GATE CHARGE (nC)
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VGS = 10 V
VDD = 300 V
ID = 5.9 A
td(off)
100
TJ = 100°C
TJ = 125°C
10
tr
tf TJ = 150°C
10
td(on)
1
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
0.1 TJ = 25°C TJ = −55°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 12. Diode Forward Voltage vs. Current
http://onsemi.com
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