|
|
PDF NDD60N360U1 Data sheet ( Hoja de datos )
| Número de pieza | NDD60N360U1 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NDD60N360U1 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NDD60N360U1
N-Channel Power MOSFET
600 V, 360 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
Power Dissipation –
RqJC
Pulsed Drain
Current
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
VDSS
VGS
ID
PD
IDM
600 V
±25 V
11 A
6.9
114 W
44 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS 13 A
Single Pulse Drain−to−Source Avalanche
Energy (ID = 3.5 A)
EAS
64 mJ
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C) (Figure 15)
VISO
−V
Peak Diode Recovery (Note 1)
dv/dt 15 V/ns
Lead Temperature for Soldering Leads
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. ISD ≤ 13 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
(Note 3)
NDD60N360U1
(Note 2)
NDD60N360U1−1
(Note 2)
NDD60N360U1−35G
RqJC
RqJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
1.1 °C/W
°C/W
47
98
95
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
360 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
1 23
IPAK
CASE 369D
4
4
12
3
DPAK
CASE 369C
12 3
IPAK
CASE 369AD
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 0
1
Publication Order Number:
NDD60N360U1/D
1 page  
NDD60N360U1
TYPICAL CHARACTERISTICS
1.15 100,000
1.10
1.05
1.00
0.95
ID = 250 mA
10,000
TJ = 150°C
0.90
0.85
1000
TJ = 125°C
0.80
0.75
100 TJ = 100°C
0.70
0.65
−50 −25 0 25 50 75 100 125 150
10
0 100 200 300 400 500 600
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Threshold Voltage Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
10,000
1000
100
COSS
CISS
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
14
12
10
8 QGS
6
QT
VDS
QGD
350
300
250
VGS
200
150
10
1
0.1
100
10
1
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Capacitance Variation
1000
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 25°C
4
VDS = 300 V
100
TJ = 25°C
2
ID = 13 A
50
00
0 4 8 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
VGS = 10 V
VDD = 300 V
td(off)
tf
tr
10 td(on)
0.1 TJ = −55°C
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
1
0.1
1
10 100
RG, GATE RESISTANCE (W)
Figure 12. Resistive Switching Time Variation
vs. Gate Resistance
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NDD60N360U1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NDD60N360U1 | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |