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KF10N50PZのメーカーはKECです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | KF10N50PZ |
| |
部品説明 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
メーカ | KEC | ||
ロゴ | |||
このページの下部にプレビューとKF10N50PZダウンロード(pdfファイル)リンクがあります。 Total 7 pages
SEMICONDUCTOR
TECHNICAL DATA
KF10N50P/F/PZ/FZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=500V, ID=10A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.65 @VGS=10V
Qg(typ.)= 19.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL KF10N50P KF10N50F UNIT
KF10N50PZ KF10N50FZ
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
10 10*
5 5*
25 25*
300
14.7
4.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above 25
PD
130
1.04
41.5 W
0.33 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
RthJC
RthJA
0.96
62.5
3.0 /W
62.5 /W
* : Drain current limited by maximum junction temperature.
KF10N50P,KF10N50PZ
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF10N50F,KF10N50FZ
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
(KF10N50P, KF10N50F)
D
(KF10N50PZ, KF10N50FZ)
D
TO-220IS (1)
G
2008. 10. 29
G
S
Revision No : 1
S
1/7
1 Page KF10N50P/F/PZ/FZ
Fig1. ID - VDS
100
VGS=10V
VGS=7V
10
VGS=5V
1
0.1
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
101
100 C
25 C
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source - Drain Voltage VSD (V)
2008. 10. 29
Revision No : 1
VDS=30V
101
Fig2. ID - VGS
100
100 C
25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
1.4
1.2
1.0
VGS=6V
0.8
0.6
VGS=10V
0.4
0.2
0 2 4 6 8 10 12
Drain Current ID (A)
3.0
VGS =10V
2.5 IDS = 5A
Fig6. RDS(ON) - Tj
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50 100
Junction Temperature Tj ( C)
150
3/7
3Pages KF10N50P/F/PZ/FZ
Fig14. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig15. Single Pulsed Avalanche Energy
50V
25Ω
10 V VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig16. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2008. 10. 29
Revision No : 1
6/7
6 Page | |||
ページ | 合計 : 7 ページ | ||
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部品番号 | 部品説明 | メーカ |
KF10N50P | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF10N50PZ | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |