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7NM70のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 7NM70 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと7NM70ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
UNISONIC TECHNOLOGIES CO., LTD
7NM70
7A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7NM70 is a high voltage super junction MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) < 1.2Ω @ VGS = 10V, ID = 3.5A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM70L-TA3-T
7NM70G-TA3-T
7NM70L-TF3-T
7NM70G-TF3-T
7NM70L-TF1-T
7NM70G-TF1-T
7NM70L-TF2-T
7NM70G-TF2-T
7NM70L-TF3T-T
7NM70G-TF3T-T
7NM70L-TM3-T
7NM70G-TM3-T
7NM70L-TMS2-T
7NM70G-TMS2-T
7NM70L-TN3-R
7NM70G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S2
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-047.B
1 Page 7NM70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
Continuous Drain Current
TC = 25°C
TC = 100°C
Drain Current Pulsed (Note 2)
VGSS
ID
IDM
±30
7.0
4.7
28
V
A
A
A
Avalanche Energy, Single Pulsed (Note 3)
Avalanche Energy, Repetitive, Limited by TJMAX
EAS
EAR
40 mJ
14.2 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.2 V/ns
TO-220
142 W
Power Dissipation
(TC = 25°C)
TO-220F/TO-220F1
TO-220F3
TO-220F2
PD
48 W
50 W
TO-251/TO-251S2
TO-252
60 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=20mH, IAS=2A, VDD=50V, RG=0 Ω, Starting TJ=25°C
4. ISD ≤ 7.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S2
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-251S2
TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
0.88
2.6
2.5
2.08
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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3Pages 7NM70
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
RD
10V
tp
D.U.T.
Unclamped Inductive Switching Test Circuit
VDD
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R205-047.B
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ 7NM70 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
7NM70 | N-CHANNEL POWER MOSFET | Unisonic Technologies |